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Nitrogen incorporation in homoepitaxial ZnO CVD epilayers
Author(s) -
Lautenschlaeger Stefan,
Eisermann Sebastian,
Meyer Bruno K.,
Callison Gordon,
Wagner Markus R.,
Hoffmann Axel
Publication year - 2009
Publication title -
physica status solidi (rrl) – rapid research letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.786
H-Index - 68
eISSN - 1862-6270
pISSN - 1862-6254
DOI - 10.1002/pssr.200802215
Subject(s) - raman spectroscopy , substrate (aquarium) , nitrogen , materials science , photoluminescence , epitaxy , thin film , doping , zinc , polarity (international relations) , chemical engineering , analytical chemistry (journal) , nanotechnology , chemistry , layer (electronics) , optoelectronics , metallurgy , optics , organic chemistry , geology , biochemistry , oceanography , physics , engineering , cell
ZnO:N thin films have been deposited on oxygen and zinc terminated polar surfaces of ZnO. The nitrogen incorporation in the epilayers, using NH 3 as doping source, was investigated as a function of the growth temperature in the range between 380 °C and 580 °C. We used Raman spectroscopy and low temperature photoluminescence to investigate the doping properties. It turned out that the nitrogen incorporation strongly depends on both, the surface polarity of the epitaxial films and the applied growth temperatures. In our CVD process low growth temperatures and Zn‐terminated substrate surfaces clearly favour the nitrogen incorporation in the ZnO thin films. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)