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Growth characteristics of chloride‐based SiC epitaxial growth
Author(s) -
Pedersen H.,
Leone S.,
Henry A.,
Lundskog A.,
Janzén E.
Publication year - 2008
Publication title -
physica status solidi (rrl) – rapid research letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.786
H-Index - 68
eISSN - 1862-6270
pISSN - 1862-6254
DOI - 10.1002/pssr.200802183
Subject(s) - chloride , epitaxy , chemistry , growth rate , chemical engineering , materials science , organic chemistry , mathematics , geometry , layer (electronics) , engineering
In this study some aspects of the chloride‐based CVD growth process have been investigated by using both the approach to add HCl to the standard precursors and by using the single molecule precursor methyltrichlorosilane (MTS). The efficiency of the process for different precursors, the growth rate stability and the effect that the C/Si and Cl/Si ratios have on the growth are studied. It is found that MTS is the most efficient precursor and that the growth becomes carbon limited at C/Si < 1. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)