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n‐type silicon solar cells with surface‐passivated screen‐printed aluminium‐alloyed rear emitter
Author(s) -
Bock Robert,
Schmidt Jan,
Brendel Rolf
Publication year - 2008
Publication title -
physica status solidi (rrl) – rapid research letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.786
H-Index - 68
eISSN - 1862-6270
pISSN - 1862-6254
DOI - 10.1002/pssr.200802168
Subject(s) - common emitter , saturation current , silicon , materials science , amorphous silicon , doping , optoelectronics , aluminium , monocrystalline silicon , crystalline silicon , passivation , nanotechnology , metallurgy , layer (electronics) , electrical engineering , voltage , engineering
Aluminium‐doped p‐type (Al‐p + ) silicon emitters fabricated by means of a simple screen‐printing process are effectively passivated by plasma‐enhanced chemical‐vapour deposited amorphous silicon (a‐Si). We measure an emitter saturation current density of only 246 fA/cm 2 , which is the lowest value achieved so far for a simple screen‐printed Al‐p + emitter on silicon. In order to demonstrate the applicability of this easy‐to‐fabricate p + emitter to high‐efficiency silicon solar cells, we implement our passivated p + emitter into an n + np + solar cell structure. An independently confirmed conversion efficiency of 19.7% is achieved using n‐type phosphorus‐doped Czochralski‐grown silicon as bulk material, clearly demonstrating the high‐efficiency potential of the newly developed a‐Si passivated Al‐p + emitter. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)