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Analysis of the current linearity at low illumination of high‐efficiency back‐junction back‐contact silicon solar cells
Author(s) -
Granek Filip,
Hermle Martin,
Glunz Stefan W.
Publication year - 2008
Publication title -
physica status solidi (rrl) – rapid research letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.786
H-Index - 68
eISSN - 1862-6270
pISSN - 1862-6254
DOI - 10.1002/pssr.200802126
Subject(s) - suns in alchemy , common emitter , passivation , optoelectronics , linearity , materials science , quantum efficiency , silicon , current (fluid) , optics , nanotechnology , electrical engineering , physics , engineering , layer (electronics)
The relation between current and illumination intensity of three structures of high‐efficiency back‐junction back‐contact silicon solar cells was analyzed. Both, n‐type cells with non‐diffused front surface and p‐type cell with floating n‐emitter show a pronounced non‐linearity due to strong illumination dependence of the passivation quality of the non‐diffused surface and the floating junction respectively. Quantum efficiency (QE) of this cell type drops significantly for the illumination lower than 0.5 suns. In contrast the QE of n‐type cells with n + ‐front surface field (FSF) is linear. Low illumination current characteristics of all three of the analyzed structures could be well described by physical models. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)