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Microcrystalline silicon‐carbon alloys as anti‐reflection window layers in high efficiency thin film silicon solar cells
Author(s) -
Chen Tao,
Huang Yuelong,
Yang Deren,
Carius Reinhard,
Finger Friedhelm
Publication year - 2008
Publication title -
physica status solidi (rrl) – rapid research letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.786
H-Index - 68
eISSN - 1862-6270
pISSN - 1862-6254
DOI - 10.1002/pssr.200802119
Subject(s) - materials science , microcrystalline , silicon , layer (electronics) , substrate (aquarium) , silicon carbide , chemical vapor deposition , solar cell , reflection (computer programming) , optoelectronics , nanotechnology , crystallography , composite material , chemistry , oceanography , geology , computer science , programming language
Microcrystalline silicon‐carbide (μc‐SiC:H) films were prepared using hot wire chemical vapor deposition at low substrate temperature. The μc‐SiC:H films were employed as window layers in microcrystalline silicon (μc‐Si:H) solar cells. The short‐circuit current density ( J SC ) in these n‐side illuminated n–i–p cells increases with increasing the deposition time t W of the μc‐SiC:H window layer from 5 min to 60 min. The enhanced J SC is attributed to both the high transparency and an anti‐reflection effect of the μc‐SiC:H window layer. Using these favourable optical properties of the μc‐SiC:H window layer in μc‐Si:H solar cells, a J SC value of 23.8 mA/cm 2 and cell efficiencies above 8.0% were achieved with an absorber layer thickness of 1 μm and a Ag back reflector. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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