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Very high crystalline quality of thick 4H‐SiC epilayers grown from methyltrichlorosilane (MTS)
Author(s) -
Pedersen H.,
Leone S.,
Henry A.,
Darakchieva V.,
Carlsson P.,
Gällström A.,
Janzén E.
Publication year - 2008
Publication title -
physica status solidi (rrl) – rapid research letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.786
H-Index - 68
eISSN - 1862-6270
pISSN - 1862-6254
DOI - 10.1002/pssr.200802081
Subject(s) - photoluminescence , chemical vapor deposition , exciton , materials science , diffraction , high resolution , crystallography , chemistry , optoelectronics , optics , condensed matter physics , physics , remote sensing , geology
200 µm thick 4H‐SiC epilayers have been grown by chloride‐based chemical‐vapor deposition using methyltrichlorosilane (MTS) as single precursor. The very high crystalline quality of the grown epilayer is demonstrated by high resolution X‐Ray Diffraction rocking curve with a full‐width‐half‐maximum value of only 9 arcsec. The high quality of the epilayer is further shown by low temperature photoluminescence showing strong free exciton and nitrogen bound exciton lines. The very high crystalline quality achieved for the thick epilayer grown in just two hours at 1600 °C suggests that MTS is a suitable precursor molecule for SiC bulk growth. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)