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Piezo‐voltage control of magnetization orientation in a ferromagnetic semiconductor
Author(s) -
Goennenwein S. T. B.,
Althammer M.,
Bihler C.,
Brandlmaier A.,
Geprägs S.,
Opel M.,
Schoch W.,
Limmer W.,
Gross R.,
Brandt M. S.
Publication year - 2008
Publication title -
physica status solidi (rrl) – rapid research letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.786
H-Index - 68
eISSN - 1862-6270
pISSN - 1862-6254
DOI - 10.1002/pssr.200802011
Subject(s) - magnetization , ferromagnetism , condensed matter physics , materials science , magnetoresistance , piezoelectricity , magnetic anisotropy , anisotropy , magnetic field , actuator , orientation (vector space) , physics , electrical engineering , optics , composite material , geometry , engineering , mathematics , quantum mechanics
The possibility to control magnetic properties via electrical fields is investigated in a piezoelectric actuator/ferromagnetic semiconductor thin film hybrid structure. Using anisotropic magnetoresistance techniques, the magnetic anisotropy and the magnetization orientation within the plane of the ferromagnetic film are measured quantitatively. The experiments reveal that the application of an electrical field to the piezoelectric actuator allows to continuously and reversibly rotate the magnetization orientation in the ferromagnet by about 70°. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)