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Local chemical state change in Co–O resistance random access memory
Author(s) -
Shima Hisashi,
Takano Fumiyoshi,
Muramatsu Hidenobu,
Yamazaki Masashi,
Akinaga Hiroyuki,
Kogure Akinori
Publication year - 2008
Publication title -
physica status solidi (rrl) – rapid research letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.786
H-Index - 68
eISSN - 1862-6270
pISSN - 1862-6254
DOI - 10.1002/pssr.200802003
Subject(s) - x ray photoelectron spectroscopy , materials science , oxide , atomic force microscopy , electrode , stacking , resistive random access memory , kelvin probe force microscope , metal , conductive atomic force microscopy , photoemission spectroscopy , analytical chemistry (journal) , cantilever , transition metal , nanotechnology , chemistry , nuclear magnetic resonance , composite material , metallurgy , physics , biochemistry , organic chemistry , chromatography , catalysis
Kelvin probe force microscopy (KFM) and conductive atomic force microscopy (C‐AFM) together with micro X‐ray photoelectron spectroscopy (XPS) were performed for the stacking structure comprising of the transition metal oxide Co–O and metal electrode, which exhibits large reproducible resistance switching. The application of the external voltage by the C‐AFM cantilever decreases the resistance of Co–O, which well accords with the non‐polar forming process observed in the Pt/Co–O/Pt trilayer, known as the candidate of resistance random access memory (ReRAM). Furthermore, the KFM and micro XPS experimentally revealed that the local reductive reaction of Co–O possibly nucleates the defect related energy levels which dominates the current conduction in the low resistance state. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)