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Comparison of InGaN/GaN light emitting diodes grown on m ‐plane and a ‐plane bulk GaN substrates
Author(s) -
Yamada Hisashi,
Iso Kenji,
Saito Makoto,
Hirasawa Hirohiko,
Fellows Natalie,
Masui Hisashi,
Fujito Kenji,
Speck James S.,
DenBaars Steven P.,
Nakamura Shuji
Publication year - 2008
Publication title -
physica status solidi (rrl) – rapid research letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.786
H-Index - 68
eISSN - 1862-6270
pISSN - 1862-6254
DOI - 10.1002/pssr.200701313
Subject(s) - light emitting diode , materials science , electroluminescence , optoelectronics , photoluminescence , plane (geometry) , diode , substrate (aquarium) , wide bandgap semiconductor , wavelength , spontaneous emission , optics , physics , nanotechnology , geometry , laser , oceanography , mathematics , layer (electronics) , geology
InGaN/GaN‐based light emitting diodes (LEDs) grown on m ‐plane, a ‐plane and off‐axis between m ‐ and a ‐plane GaN bulk substrates were investigated. A smooth surface was obtained when a ‐plane substrate was applied; however, large amounts of defects were observed. Photoluminescence measurements of the LEDs with a well thickness of 2.5 nm revealed that all the LEDs showed the peak emission wavelength at 389 nm. The PL intensity of the a ‐plane LED is one order of magnitude lower than that of the m ‐plane LED. The a ‐plane LEDs showed significant lower electroluminescence output powers than m ‐plane LEDs, suggesting that excitons are trapped by the defects, which act as non‐radiative recombination centers. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)