Comparison of InGaN/GaN light emitting diodes grown on  m  ‐plane and  a  ‐plane bulk GaN substrates | Zendy

Yamada Hisashi | Zendy; Iso Kenji | Zendy; Saito Makoto | Zendy; Hirasawa Hirohiko | Zendy; Fellows Natalie | Zendy; Masui Hisashi | Zendy; Fujito Kenji | Zendy; Speck James S. | Zendy; DenBaars Steven P. | Zendy; Nakamura Shuji | Zendy

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Comparison of InGaN/GaN light emitting diodes grown on m ‐plane and a ‐plane bulk GaN substrates

Author(s) -

Yamada Hisashi,

Iso Kenji,

Saito Makoto,

Hirasawa Hirohiko,

Fellows Natalie,

Masui Hisashi,

Fujito Kenji,

Speck James S.,

DenBaars Steven P.,

Nakamura Shuji

Publication year - 2008

Publication title -

physica status solidi (rrl) – rapid research letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.786

H-Index - 68

eISSN - 1862-6270

pISSN - 1862-6254

DOI - 10.1002/pssr.200701313

Subject(s) - light emitting diode , materials science , electroluminescence , optoelectronics , photoluminescence , plane (geometry) , diode , substrate (aquarium) , wide bandgap semiconductor , wavelength , spontaneous emission , optics , physics , nanotechnology , geometry , laser , oceanography , mathematics , layer (electronics) , geology

InGaN/GaN‐based light emitting diodes (LEDs) grown on m ‐plane, a ‐plane and off‐axis between m ‐ and a ‐plane GaN bulk substrates were investigated. A smooth surface was obtained when a ‐plane substrate was applied; however, large amounts of defects were observed. Photoluminescence measurements of the LEDs with a well thickness of 2.5 nm revealed that all the LEDs showed the peak emission wavelength at 389 nm. The PL intensity of the a ‐plane LED is one order of magnitude lower than that of the m ‐plane LED. The a ‐plane LEDs showed significant lower electroluminescence output powers than m ‐plane LEDs, suggesting that excitons are trapped by the defects, which act as non‐radiative recombination centers. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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