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Domain wall thickness variations of ferroelectric BaMgF 4 single crystals in the tip fields of an atomic force microscope
Author(s) -
Zeng H. R.,
Shimamura K.,
Villora E. A. G.,
Takekawa S.,
Kitamura K.,
Li G. R.,
Yin Q. R.
Publication year - 2008
Publication title -
physica status solidi (rrl) – rapid research letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.786
H-Index - 68
eISSN - 1862-6270
pISSN - 1862-6254
DOI - 10.1002/pssr.200701293
Subject(s) - piezoresponse force microscopy , ferroelectricity , polarization (electrochemistry) , domain wall (magnetism) , materials science , atomic force microscopy , condensed matter physics , microscope , domain (mathematical analysis) , crystal (programming language) , polarized light microscopy , microscopy , optics , single crystal , crystallography , nanotechnology , chemistry , physics , optoelectronics , magnetic field , dielectric , mathematical analysis , magnetization , mathematics , quantum mechanics , computer science , programming language
The ferroelectric domain wall thickness of a fluoride BaMgF 4 single crystal was investigated by piezoresponse force microscopy. It was found that the domain wall thickness shows a strong spatial variation in the as‐grown crystal and the polarization reversal process. The original wall thickness is greater (about two to seven times) than that switched by the tip fields of the atomic force microscope. A significantly narrower domain wall was obtained in the higher tip‐field. The trapped defects at the domain wall play an important role in the spatial variation of the polarization width of 180° domain wall in the BaMgF 4 single crystal. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)