Piezoresistivity in GaAs/In  x  Ga 1– x  As/AlAs superlattice structures | Zendy

Zhang Wendong | Zendy; Hu Jie | Zendy; Xue Chenyang | Zendy; Zhang Binzhen | Zendy; Xiong Jijun | Zendy; Qiao Hui | Zendy; Li Junhong | Zendy

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Piezoresistivity in GaAs/In x Ga 1– x As/AlAs superlattice structures

Author(s) -

Zhang Wendong,

Hu Jie,

Xue Chenyang,

Zhang Binzhen,

Xiong Jijun,

Qiao Hui,

Li Junhong

Publication year - 2008

Publication title -

physica status solidi (rrl) – rapid research letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.786

H-Index - 68

eISSN - 1862-6270

pISSN - 1862-6254

DOI - 10.1002/pssr.200701273

Subject(s) - superlattice , materials science , condensed matter physics , crystallography , optoelectronics , physics , chemistry

We report on a strong piezoresistive effect in GaAs/ In x Ga 1– x As/AlAs superlattice structures fabricated on a GaAs‐base cantilever. The measurements of the piezoresistive properties were performed for tensile strains by static pressure experiments. The maximum gauge factor (GF) for the GaAs/In x Ga 1– x As/AlAs epilayer can be estimated to 200, which is higher than the value of the gauge factor reported for Si transducers. Our results demonstrate a higher potential of GaAs/In x Ga 1– x As/AlAs superlattice structures for the development of piezoresistive sensors. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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