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Piezoresistivity in GaAs/In x Ga 1– x As/AlAs superlattice structures
Author(s) -
Zhang Wendong,
Hu Jie,
Xue Chenyang,
Zhang Binzhen,
Xiong Jijun,
Qiao Hui,
Li Junhong
Publication year - 2008
Publication title -
physica status solidi (rrl) – rapid research letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.786
H-Index - 68
eISSN - 1862-6270
pISSN - 1862-6254
DOI - 10.1002/pssr.200701273
Subject(s) - superlattice , piezoresistive effect , gauge factor , materials science , cantilever , condensed matter physics , optoelectronics , physics , composite material , medicine , alternative medicine , pathology , fabrication
Abstract We report on a strong piezoresistive effect in GaAs/ In x Ga 1– x As/AlAs superlattice structures fabricated on a GaAs‐base cantilever. The measurements of the piezoresistive properties were performed for tensile strains by static pressure experiments. The maximum gauge factor (GF) for the GaAs/In x Ga 1– x As/AlAs epilayer can be estimated to 200, which is higher than the value of the gauge factor reported for Si transducers. Our results demonstrate a higher potential of GaAs/In x Ga 1– x As/AlAs superlattice structures for the development of piezoresistive sensors. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)