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Thermoelectric effect in laser annealed printed nanocrystalline silicon layers
Author(s) -
Lechner Robert,
Wiggers Hartmut,
Ebbers André,
Steiger Jürgen,
Brandt Martin S.,
Stutzmann Martin
Publication year - 2007
Publication title -
physica status solidi (rrl) – rapid research letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.786
H-Index - 68
eISSN - 1862-6270
pISSN - 1862-6254
DOI - 10.1002/pssr.200701198
Subject(s) - materials science , seebeck coefficient , nanocrystalline material , thermoelectric effect , doping , silicon , thermal conductivity , nanocrystalline silicon , boron , annealing (glass) , electrical resistivity and conductivity , pulsed laser deposition , thermoelectric materials , optoelectronics , thin film , analytical chemistry (journal) , crystalline silicon , composite material , nanotechnology , chemistry , electrical engineering , physics , organic chemistry , engineering , amorphous silicon , thermodynamics , chromatography
Nanocrystalline boron and phosphorus doped silicon particles were produced in a microwave reactor, collected, and dispersed in ethanol. Pulsed laser annealing of spin‐coated films of these particles resulted in p‐ and n‐type conductive layers on flexible substrates if a threshold laser energy density of 60 mJ/cm 2 was exceeded. The thermopower of the laser sintered layers exhibits a distinct maximum at a doping concen‐ tration around 10 19 cm –3 for both boron and phosphorus doping with an absolute value of the Seebeck coefficient of about 300 µV/K. Since the thermal conductivity of the layers is reduced by nearly the same factor compared to bulk crystalline silicon as the electrical conductivity, these results are promising for the application of such nanocrystalline layers in thin film thermoelectric devices. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)