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Highly efficient bismuth telluride doped p‐type Pb 0.13 Ge 0.87 Te for thermoelectric applications
Author(s) -
Gelbstein Yaniv,
Dashevsky Zinovi,
Dariel Moshe P.
Publication year - 2007
Publication title -
physica status solidi (rrl) – rapid research letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.786
H-Index - 68
eISSN - 1862-6270
pISSN - 1862-6254
DOI - 10.1002/pssr.200701160
Subject(s) - bismuth telluride , thermoelectric effect , seebeck coefficient , materials science , electrical resistivity and conductivity , bismuth , doping , thermoelectric materials , trigonal crystal system , analytical chemistry (journal) , crystal structure , condensed matter physics , crystallography , chemistry , metallurgy , thermodynamics , optoelectronics , electrical engineering , physics , chromatography , engineering
Abstract Bi 2 Te 3 doped p‐type Pb 0.13 Ge 0.87 Te samples were prepared by hot pressing. We report on very high power factor values of ∼30 μW/cm K 2 at 500 °C, as were determined from Seebeck coefficient and electrical resistivity measurements. From dilatometric characterization, the phase transition from the low temperature rhombohedral to the high temperature cubic NaCl structures, takes place at 373 °C. This transition is accompanied by a continuous and gradual change of the lattice parameters, as was observed by hot stage XRD, suggesting a good mechanical durability upon thermal cycling and operating in large thermal gradients.Rhombohedral distortion of the cubic NaCl structure of Pb 1– x Ge x Te upon cooling, characterized by changes in the interaxial angle α and the lattice parameter. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)