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Growth of InN films on spinel substrates by pulsed laser deposition
Author(s) -
Mitamura K.,
Ohta J.,
Fujioka H.,
Oshima M.
Publication year - 2007
Publication title -
physica status solidi (rrl) – rapid research letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.786
H-Index - 68
eISSN - 1862-6270
pISSN - 1862-6254
DOI - 10.1002/pssr.200701138
Subject(s) - spinel , pulsed laser deposition , materials science , epitaxy , substrate (aquarium) , deposition (geology) , thin film , lattice (music) , crystallography , bar (unit) , lattice constant , analytical chemistry (journal) , optoelectronics , chemistry , nanotechnology , optics , metallurgy , diffraction , layer (electronics) , physics , paleontology , oceanography , chromatography , sediment , geology , meteorology , acoustics , biology
We have grown InN films on MgAl 2 O 4 (111) substrates with atomically flat surfaces using pulsed laser deposition (PLD) and compared their structural properties with those grown on (Mn,Zn)Fe 2 O 4 (111) substrates. It has been revealed that InN(0001) films grow on MgAl 2 O 4 (111) with an in‐plane epitaxial relationship of InN[1 $ \bar 1 $ 00] // MgAl 2 O 4 [1 $ \bar 1 $ 0], achieving a lattice mismatch minimum. The InN films exhibited a clear sixfold rotational symmetry, without 30° rotational domains and with a full width at half maximum value of the InN 0002 rocking curve being 17.5 arcmin. Comparison between InN films grown on MgAl 2 O 4 and those on (Mn,Zn)Fe 2 O 4 led us to conclude that suppression of the interfacial reactions between the InN films and the substrate is inherently important to obtain high quality InN on substrates with a spinel structure. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)