Ultra‐high long‐term stability of oxide‐TTFTs under current stress | Zendy

Riedl T. | Zendy; Görrn P. | Zendy; Hölzer P. | Zendy; Kowalsky W. | Zendy

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Ultra‐high long‐term stability of oxide‐TTFTs under current stress

Author(s) -

Riedl T.,

Görrn P.,

Hölzer P.,

Kowalsky W.

Publication year - 2007

Publication title -

physica status solidi (rrl) – rapid research letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.786

H-Index - 68

eISSN - 1862-6270

pISSN - 1862-6254

DOI - 10.1002/pssr.200701129

Subject(s) - thin film transistor , materials science , threshold voltage , optoelectronics , stress (linguistics) , oxide , transistor , current (fluid) , biasing , stability (learning theory) , voltage , electrical engineering , engineering physics , nanotechnology , computer science , physics , layer (electronics) , metallurgy , engineering , linguistics , philosophy , machine learning

In this letter the stability of transparent thin‐film transistors (TTFTs) based on the ZnO–SnO 2 (ZTO) material system is investigated. Bottom‐gate devices have been subject to electrical stress via a gate–source bias of 10 V and a drain‐source bias of 10 V leading to a drain–source current of 188 µA. In optimized TTFTs with a composition of [Zn]:[Sn] = 36:64 the relative change of the saturated field effect mobility was less than 1% and the threshold voltage shift was about 320 mV after 1000 hours of operation. This extraordinary stability of ZTO TTFTs underlines their suitability as drivers in active matrix OLED displays. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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