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Resonant Raman scattering at exciton intermediate states in ZnO
Author(s) -
Wagner M. R.,
Zimmer P.,
Hoffmann A.,
Thomsen C.
Publication year - 2007
Publication title -
physica status solidi (rrl) – rapid research letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.786
H-Index - 68
eISSN - 1862-6270
pISSN - 1862-6254
DOI - 10.1002/pssr.200701106
Subject(s) - exciton , raman scattering , raman spectroscopy , resonance (particle physics) , x ray raman scattering , excitation , luminescence , phonon , scattering , coherent anti stokes raman spectroscopy , atomic physics , chemistry , molecular physics , photoluminescence , liquid helium , materials science , condensed matter physics , helium , optics , optoelectronics , physics , quantum mechanics
We present results on resonant Raman scattering in single crystal ZnO using a continuously tuneable excitation in the energy region of the free and bound excitons. The PL and Raman spectra show the presence of a dominant luminescence band at 3.310 eV as well as the A 1 (TO), E 2 (high), E 1 (LO), and 2E 1 (LO) Raman modes at liquid nitrogen temperature. A strong resonance of the Raman scattering cross section was found for the second‐order 2E 1 (LO) phonon mode. This enhancement is considerably larger than for the non‐polar E 2 (high) mode due to Fröhlich interaction. Furthermore, the resonance enhancement at bound excitons was studied at liquid helium temperature proving the essential role of excitonic intermediate states for resonant Raman scattering in ZnO. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)