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High power and high efficiency green light emitting diode on free‐standing semipolar (11 $ \bar 2 $ 2) bulk GaN substrate
Author(s) -
Sato Hitoshi,
Tyagi Anurag,
Zhong Hong,
Fellows Natalie,
Chung Roy B.,
Saito Makoto,
Fujito Kenji,
Speck James S.,
DenBaars Steven P.,
Nakamura Shuji
Publication year - 2007
Publication title -
physica status solidi (rrl) – rapid research letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.786
H-Index - 68
eISSN - 1862-6270
pISSN - 1862-6254
DOI - 10.1002/pssr.200701098
Subject(s) - optoelectronics , materials science , quantum efficiency , chemical vapor deposition , substrate (aquarium) , diode , bar (unit) , light emitting diode , quantum well , wavelength , optics , physics , laser , oceanography , meteorology , geology
We demonstrate a high power green InGaN/GaN multiple‐quantum‐well (MQW) light emitting diode (LED) with a peak emission wavelength of 516 nm grown on low extended defect density semipolar (11 $ \bar 2 $ 2) bulk GaN substrate by metal organic chemical vapor deposition. The output power and external quantum efficiency (EQE) at drive currents of 20 and 100 mA under direct current (DC) operation were 5.0 mW, 10.5% and 15.6 mW, 6.3%, respectively. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)