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Band bending of n‐InN epilayers and exact solution of the classical Thomas–Fermi equation
Author(s) -
Klochikhin A. A.,
Davydov V. Yu.,
Strashkova I. Yu.,
Brunkov P. N.,
Gutkin A. A.,
Rudinsky M. E.,
Chen H.Y.,
Gwo S.
Publication year - 2007
Publication title -
physica status solidi (rrl) – rapid research letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.786
H-Index - 68
eISSN - 1862-6270
pISSN - 1862-6254
DOI - 10.1002/pssr.200701096
Subject(s) - photoluminescence , degenerate energy levels , capacitance , fermi level , condensed matter physics , band bending , fermi gamma ray space telescope , planar , electron , chemistry , materials science , semiconductor , physics , quantum mechanics , electrode , optoelectronics , computer science , computer graphics (images)
The exact solution of the Thomas–Fermi equation for a planar accumulation layer of a degenerate semiconductor is presented. The obtained results are compared with theoretical literature data. The applicability of the solution is demonstrated by using results of electrochemical capacitance–voltage measurements and photoluminescence data for n‐InN epilayers. It has been found that the difference between the electron concentrations estimated from the Hall and photoluminescence measurements is a measure of the electron content in the accumulation layer with acceptable accuracy. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)