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Improved electroluminescence on nonpolar m ‐plane InGaN/GaN quantum wells LEDs
Author(s) -
Kim KwangChoong,
Schmidt Mathew C.,
Sato Hitoshi,
Wu Feng,
Fellows Natalie,
Saito Makoto,
Fujito Kenji,
Speck James S.,
Nakamura Shuji,
DenBaars Steven P.
Publication year - 2007
Publication title -
physica status solidi (rrl) – rapid research letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.786
H-Index - 68
eISSN - 1862-6270
pISSN - 1862-6254
DOI - 10.1002/pssr.200701061
Subject(s) - light emitting diode , electroluminescence , optoelectronics , chemical vapor deposition , metalorganic vapour phase epitaxy , materials science , diode , quantum efficiency , quantum well , optics , epitaxy , laser , nanotechnology , physics , layer (electronics)
Improved nonpolar m ‐plane $\bar 1$ light emitting diodes (LEDs) with a thick InGaN multi‐quantum‐well (MQW) structure have been fabricated on low extended defect bulk m ‐plane GaN substrates using metal organic chemical vapor deposition (MOCVD). The peak wavelength of the electroluminescence emission from the packaged LEDs was 402 nm, which is in the blue‐violet region. The output power and EQE were 28 mW and 45.4%, respectively, at a pulsed driving current of 20 mA. With increasing current, the output power increased linearly, and fairly flat EQE was observed with increasing drive current. At 200 mA, the power and EQE were 250 mW and 41%, respectively. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)