p‐type conduction in stacking‐fault‐free  m  ‐plane GaN | Zendy

McLaurin Melvin | Zendy; Speck James S. | Zendy

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p‐type conduction in stacking‐fault‐free m ‐plane GaN

Author(s) -

McLaurin Melvin,

Speck James S.

Publication year - 2007

Publication title -

physica status solidi (rrl) – rapid research letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.786

H-Index - 68

eISSN - 1862-6270

pISSN - 1862-6254

DOI - 10.1002/pssr.200701041

Subject(s) - anisotropy , stacking , polar , condensed matter physics , materials science , plane (geometry) , stacking fault , basal plane , scattering , electron mobility , thermal conduction , crystallography , chemistry , optoelectronics , optics , composite material , geometry , physics , mathematics , organic chemistry , astronomy

Transport measurements of p‐type m ‐plane GaN films grown on low extended‐defect density, free‐standing m ‐plane (10 $ \bar 1 $ 0) GaN substrates are presented. No significant anisotropy in in‐plane mobility was found for hole concentrations between 2.45 × 10 17 and 8.7 × 10 18 cm –3 . Since faulted, heteroepitaxial m ‐plane films showed significant anisotropy in electron and hole mobility a microstructural feature with anisotropic distribution (basal plane stacking faults) is discussed as a possible source of anisotropic scattering in non‐polar and semi‐polar films. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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