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Epitaxial TiC/SiC multilayers
Author(s) -
Eklund P.,
Högberg H.,
Hultman L.
Publication year - 2007
Publication title -
physica status solidi (rrl) – rapid research letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.786
H-Index - 68
eISSN - 1862-6270
pISSN - 1862-6254
DOI - 10.1002/pssr.200701027
Subject(s) - epitaxy , materials science , amorphous solid , nanocrystalline material , sputter deposition , substrate (aquarium) , metastability , optoelectronics , sputtering , crystallography , composite material , nanotechnology , thin film , layer (electronics) , chemistry , oceanography , organic chemistry , geology
Epitaxial TiC/SiC multilayers were grown by magnetron sputtering at a substrate temperature of 550 °C, where SiC is normally amorphous. The epitaxial TiC template induced growth of cubic SiC up to a thickness of ∼2 nm. Thicker SiC layers result in a direct transition to growth of the metastable amorphous SiC followed by renucleation of nanocrystalline TiC layers.X‐ray diffraction pole‐figure plot of an epitaxial TiC/SiC multilayer. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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