Premium
Defects in thin film silicon at the transition from amorphous to microcrystalline structure
Author(s) -
Astakhov O.,
Carius R.,
Petrusenko Yu.,
Borysenko V.,
Barankov D.,
Finger F.
Publication year - 2007
Publication title -
physica status solidi (rrl) – rapid research letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.786
H-Index - 68
eISSN - 1862-6270
pISSN - 1862-6254
DOI - 10.1002/pssr.200600065
Subject(s) - microcrystalline , amorphous solid , annealing (glass) , materials science , microcrystalline silicon , electron paramagnetic resonance , silicon , amorphous silicon , thin film , electron beam processing , irradiation , crystallography , condensed matter physics , crystalline silicon , nuclear magnetic resonance , chemistry , nanotechnology , optoelectronics , composite material , physics , nuclear physics
Defects in thin film silicon with different structure all the way from amorphous to microcrystalline were investigated by electron spin resonance with emphasis on amorphous material prepared close to the transition to crystalline growth. Electron beam irradiation and stepwise annealing is used for reversible variation of the defect density over three orders of magnitude. The electron irradiation enhances mainly the native paramagnetic defects. Additional resonances are found as satellites to the central line, which anneal rapidly at temperatures below 100 °C. These features are most pronounced for the amorphous material prepared close to the transition to crystalline growth. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)