Premium
Fabrication of freestanding GaN microstructures using AlN sacrificial layers
Author(s) -
Zaus E.,
Hermann M.,
Stutzmann M.,
Eickhoff M.
Publication year - 2007
Publication title -
physica status solidi (rrl) – rapid research letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.786
H-Index - 68
eISSN - 1862-6270
pISSN - 1862-6254
DOI - 10.1002/pssr.200600063
Subject(s) - materials science , fabrication , microstructure , cantilever , crystallite , optoelectronics , molecular beam epitaxy , etching (microfabrication) , isotropy , isotropic etching , stress (linguistics) , composite material , epitaxy , layer (electronics) , metallurgy , optics , medicine , linguistics , philosophy , alternative medicine , physics , pathology
The fabrication of freestanding GaN microstructures using AlN sacrificial layers (SLs) is reported. GaN layers were grown by plasma assisted molecular beam epitaxy (PAMBE) on polycrystalline AlN sacrificial layers that have been deposited at 600 °C. Isotropic wet chemical etching of the AlN film released GaN microbridges and – cantilevers. The stress gradient and the compressive stress in the GaN‐film was extracted by analysis of the relation between beam geometry and displacement. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)