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Amorphous IZO TTFTs with saturation mobilities exceeding 100 cm 2 /Vs
Author(s) -
Fortunato E.,
Barquinha P.,
Pimentel A.,
Pereira L.,
Gonçalves G.,
Martins R.
Publication year - 2007
Publication title -
physica status solidi (rrl) – rapid research letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.786
H-Index - 68
eISSN - 1862-6270
pISSN - 1862-6254
DOI - 10.1002/pssr.200600049
Subject(s) - amorphous solid , thin film transistor , materials science , saturation (graph theory) , threshold voltage , sputtering , optoelectronics , transistor , crystallite , polycrystalline silicon , amorphous silicon , silicon , semiconductor , voltage , analytical chemistry (journal) , thin film , electrical engineering , layer (electronics) , nanotechnology , chemistry , crystallography , crystalline silicon , metallurgy , mathematics , engineering , combinatorics , chromatography
In this paper we demonstrate the use of amorphous binary In 2 O 3 –ZnO oxides simultaneously as active channel layer and as source/drain regions in transparent thin film transistor (TTFT), processed at room temperature by rf sputtering. The TTFTs operate in the enhancement mode and their performances are thickness dependent. The best TTFTs exhibit saturation mobilities higher than 10 2 cm 2 /Vs, threshold voltages lower than 6 V, gate voltage swing of 0.8 V/dec and an on/off current ratio of 10 7 . This mobility is at least two orders of magnitude higher than that of conventional amorphous silicon TFTs and comparable to or even better than other polycrystalline semiconductors. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)