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Improved electromigration failure in Al based interconnects
Author(s) -
Kim Yong Tae,
Kim SeongIl
Publication year - 2007
Publication title -
physica status solidi (rrl) – rapid research letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.786
H-Index - 68
eISSN - 1862-6270
pISSN - 1862-6254
DOI - 10.1002/pssr.200600019
Subject(s) - electromigration , hillock , materials science , interconnection , stress (linguistics) , tin , composite material , optoelectronics , electronic engineering , metallurgy , computer science , engineering , telecommunications , linguistics , philosophy
Electromigration (EM) failure in Al interconnects is significantly improved by inserting a WN film between Al and the interlayer dielectric: over 90% of test samples failed with the Al/TiN/Ti interconnects, whereas the failure rate of the Al film on WN is reduced to less than 13% under the stress con‐ ditions of 9 MA/cm 2 and 225 °C, and the EM lifetime is also much extended at the same conditions. Experimental results suggest that higher activation energy, no hillocks and compressive stress are responsible for the improved electromigration performance in the Al/WN interconnect. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)