Open AccessElectronic and optical nature of silicon nanostructures: doping, interface effects and strain
Author(s) -
Hiller Daniel,
König Dirk,
Kůsová Kateřina
Publication year - 2016
Publication title -
physica status solidi (c)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 46
eISSN - 1610-1642
pISSN - 1862-6351
DOI - 10.1002/pssc.201670121
Subject(s) - dopant , doping , nanostructure , nanotechnology , impurity , silicon , quantum dot , materials science , engineering physics , exploit , condensed matter physics , optoelectronics , computer science , physics , quantum mechanics , computer security
This proceedings volume of phys. status solidi (c) contains research presented in Symposium P at the EMRS 2015 Fall Meeting in Warsaw, Poland. The symposium focused on silicon nanostructures in all dimensionalities and intended to cover theoretical, experimental and application aspects with emphasize on doping, surface/interface effects, and advanced metrology methods. Besides the well‐known size dependent quantum confinement effects, Si nanostructures are highly susceptible to their surrounding and any kind of impurities. Many key material properties change due to the influence of an embedding matrix or surface terminating groups. On the other hand, well established technological concepts such as majority carrier generation by impurity doping with e.g. phosphorous or boron are impeded in Si nanostructures due to self‐purification, statistical problems, or failing dopant ionization due to quantum confinement. In the course of the symposium, details on these problems but also approaches on how to circumvent or exploit these effects for novel functionalities or applications were presented and discussed. We thank all invited and contributed speakers as well as all presenters of posters. Furthermore, we appreciate the help and support of our sponsors and the editorial team of pss (c). (© 2016 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)