Open AccessErratum: Growth of GaAs nanowires on Si substrate by molecular beam epitaxy under alternating supply
Author(s) -
Kizu R.,
Yamaguchi M.,
Amano H.
Publication year - 2014
Publication title -
physica status solidi (c)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 46
eISSN - 1610-1642
pISSN - 1862-6351
DOI - 10.1002/pssc.201360002
Subject(s) - mistake , molecular beam epitaxy , nanowire , substrate (aquarium) , materials science , optoelectronics , epitaxy , nanotechnology , geology , political science , law , oceanography , layer (electronics)
Due to a technical mistake, Figures 1 and 3 in this paper [1] were displayed erroneously. Please find here the correct versions of these figures. (© 2014 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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