Open AccessErratum: In situ STM observation of site‐ controlled InAs nano‐dot growth on GaAs(001) during In and As 4 irradiations
Author(s) -
Toujyou Takashi,
Tsukamoto Shiro
Publication year - 2011
Publication title -
physica status solidi c
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 46
eISSN - 1610-1642
pISSN - 1862-6351
DOI - 10.1002/pssc.201170001
Subject(s) - in situ , quantum dot , materials science , nanotechnology , nano , optoelectronics , chemistry , composite material , organic chemistry
The amounts of As 4 flux, scanning time, and collapse time of InAs dot structure at 430 °C were erroneously reported and should be corrected. (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)