Spin‐orbit coupling in gated AlGaN/GaN 2‐dimensional electron gases | Zendy

Schäpers Th. | Zendy; Thillosen N. | Zendy; Cabañas S. | Zendy; Kaluza N. | Zendy; Guzenko V. A. | Zendy; Hardtdegen H. | Zendy

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Spin‐orbit coupling in gated AlGaN/GaN 2‐dimensional electron gases

Author(s) -

Schäpers Th.,

Thillosen N.,

Cabañas S.,

Kaluza N.,

Guzenko V. A.,

Hardtdegen H.

Publication year - 2007

Publication title -

physica status solidi c

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.21

H-Index - 46

eISSN - 1610-1642

pISSN - 1862-6351

DOI - 10.1002/pssc.200672807

Subject(s) - condensed matter physics , asymmetry , scattering , spin–orbit interaction , coupling (piping) , electron , fermi gas , weak localization , crystal (programming language) , point reflection , single crystal , spin (aerodynamics) , orbit (dynamics) , physics , chemistry , materials science , magnetoresistance , nuclear magnetic resonance , magnetic field , optics , quantum mechanics , engineering , aerospace engineering , computer science , metallurgy , thermodynamics , programming language

Weak antilocalization was studied in an Al x Ga 1– x N/GaN two‐dimensional electron gas as a function of temperature for various gate voltages. By fitting the weak antilocalization measurements by a theoretical model we found that the spin‐orbit scattering length does not vary upon changing the carrier concentration or the temperature. The occurrence of spin‐orbit coupling was attributed to the crystal inversion asymmetry. The presence of beating patterns observed in the Shubnikov–de Haas oscillations were not assigned to the presence of spin‐orbit coupling but rather to structural inhomogeneities in the Al x Ga 1– x N/GaN crystal. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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