Open AccessOptical Behavior of Pt/AlGaN Schottky‐Type UV Photodetector
Author(s) -
Jung YoungRo,
Kim JungKyu,
Lee JaeHoon,
Lee YoungHyun,
Lee MyoungBok,
Lee JungHee,
Hahm SungHo
Publication year - 2002
Publication title -
physica status solidi (c)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 46
eISSN - 1610-1642
pISSN - 1610-1634
DOI - 10.1002/pssc.200390126
Subject(s) - responsivity , materials science , optoelectronics , photodetector , schottky diode , schottky barrier , sapphire , dark current , ultraviolet , chemical vapor deposition , photodiode , active layer , layer (electronics) , optics , nanotechnology , diode , laser , physics , thin film transistor
A Schottky‐type solar‐blind photodetector was designed and fabricated by employing an unintentionally doped Al 0.33 Ga 0.67 N layer, grown on a sapphire substrate using metalorganic chemical vapor deposition. A low‐temperature grown AlGaN interlayer was also inserted between the GaN and AlGaN active layer and was shown to play an important role in decreasing the thermal and lattice mismatch‐induced crack effect in the active AlGaN layer. The Schottky‐type photodetectors fabricated on the crack‐free AlGaN layer exhibited excellent electrical characteristics and UV detecting properties. The Pt/AlGaN Schottky photodiode had a dark current of 509 nA/cm 2 at —5 V, cut‐off wavelength of 310 nm, and peak responsivity of 0.15 A/W at 280 nm. Also, the UV/visible extinction ratio was 1.5 × 10 4 in the band edge, which is one of the highest values for AlGaN photodetectors.