Open AccessN‐AlGaN/p‐InGaN/n‐GaN Heterojunction Bipolar Transistors for High Power Operation
Author(s) -
Makimoto T.,
Kumakura K.,
Kobayashi N.
Publication year - 2002
Publication title -
physica status solidi (c)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 46
eISSN - 1610-1642
pISSN - 1610-1634
DOI - 10.1002/pssc.200390125
Subject(s) - materials science , optoelectronics , common emitter , heterojunction , breakdown voltage , bipolar junction transistor , wide bandgap semiconductor , doping , transistor , electric field , band gap , gallium nitride , voltage , electrical engineering , nanotechnology , layer (electronics) , physics , quantum mechanics , engineering
We have fabricated N‐AlGaN/p‐InGaN/n‐GaN heterojunction bipolar transistors to evaluate their common‐emitter current–voltage ( I – V ) characteristics at room temperature. The device has a Si‐doped N‐AlGaN emitter, a Mg‐doped p‐InGaN base, and a Si‐doped n‐GaN collector. The common‐emitter I – V characteristics were observed up to a collector–emitter voltage of 70 V and a collector current of 14.5 mA. The breakdown voltage is as high as 100 V. The corresponding breakdown electric field is 2 × 10 6 V/cm, which is comparable to the expected one for GaN. This high breakdown electric field is ascribed to a less damaged p‐InGaN and a wide bandgap of an n‐GaN collector. Furthermore, the leakage path through the defects in InGaN layers is considered to be eliminated by filling them with wide bandgap AlGaN layers during the emitter growth.