Open AccessThe Role of Charge Dipoles in GaN HFET Design
Author(s) -
Neuburger M.,
Daumiller I.,
Kunze M.,
Zimmermann T.,
Jogai B.,
van Nostrand J.,
Sewell J.,
Jenkins T.,
Dadgar A.,
Krost A.,
Kohn E.
Publication year - 2002
Publication title -
physica status solidi (c)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 46
eISSN - 1610-1642
pISSN - 1610-1634
DOI - 10.1002/pssc.200390123
Subject(s) - ambipolar diffusion , dipole , optoelectronics , heterojunction , polarization (electrochemistry) , doping , materials science , field effect transistor , electric field , transistor , electrical engineering , physics , voltage , electron , chemistry , engineering , quantum mechanics
Polarization induced charge dipoles are a new phenomenon in GaN‐devices. Therefore a ridged quantum mechanical and an engineering model have been developed to allow for polarization effects in GaN‐based heterostructures. A corresponding routine has been implemented into a commercial device simulator and applied to a variety of FET‐device structures including an AlGaN double barrier device and n‐channel and p‐channel InGaN FET structure. The basic concept to avoid an ambipolar carrier distribution caused by the dipole field is that of doping screening of the polarization field.