Open AccessAlGaN/GaN HEMTs on Resistive Si(111) Substrate: From Material Assessment to RF Power Performances
Author(s) -
Cordier Y.,
Semond F.,
Lorenzini P.,
Grandjean N.,
Natali F.,
Damilano B.,
Massies J.,
Hoël V.,
Minko A.,
Vellas N.,
Gaquière C.,
DeJaeger J.C.,
Dessertene B.,
Cassette S.,
Surrugue M.,
Adam D.,
Grattepain J.C.,
Delage S.L.
Publication year - 2002
Publication title -
physica status solidi (c)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 46
eISSN - 1610-1642
pISSN - 1610-1634
DOI - 10.1002/pssc.200390117
Subject(s) - materials science , high electron mobility transistor , optoelectronics , resistive touchscreen , substrate (aquarium) , molecular beam epitaxy , layer (electronics) , radio frequency , epitaxy , rf power amplifier , gallium nitride , transistor , electrical engineering , nanotechnology , voltage , cmos , amplifier , oceanography , geology , engineering
In this paper, we report on the properties of GaN films and AlGaN/GaN HEMT structures grown by molecular beam epitaxy on resistive Si(111) substrates. The properties of the GaN buffer layer and the AlGaN/GaN HEMTs are presented. Finally, both static and high frequency performances of submicron gate length devices are analysed demonstrating their RF power capability.