Open AccessMetalorganic Chemical Vapor Deposition Growth of a GaN Epilayer on an Annealed GaN Buffer Layer
Author(s) -
Degave F.,
Ruterana P.,
Nouet G.,
Je J.H.,
Kim C.C.
Publication year - 2002
Publication title -
physica status solidi (c)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 46
eISSN - 1610-1642
pISSN - 1610-1634
DOI - 10.1002/pssc.200390110
Subject(s) - buffer (optical fiber) , epitaxy , transmission electron microscopy , materials science , layer (electronics) , annealing (glass) , chemical vapor deposition , metalorganic vapour phase epitaxy , optoelectronics , chemical engineering , crystallography , chemistry , nanotechnology , composite material , engineering , telecommunications , computer science
We investigated the growth of an epitaxial layer deposited on an annealed buffer layer using transmission electron microscopy. It is shown that crystalline quality of the epitaxial layer depends on the annealing conditions of the buffer layer. Dislocations and formation of V‐shaped defects are observed and may originate from the structure and morphology of the buffer layer.