Open AccessAlGaN/GaN HFETs on 100 mm Silicon Substrates for Commercial Wireless Applications
Author(s) -
Vescan A.,
Brown J.D.,
Johnson J.W.,
Therrien R.,
Gehrke T.,
Rajagopal P.,
Roberts J.C.,
Singhal S.,
Nagy W.,
Borges R.,
Piner E.,
Linthicum K.
Publication year - 2002
Publication title -
physica status solidi (c)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 46
eISSN - 1610-1642
pISSN - 1610-1634
DOI - 10.1002/pssc.200390106
Subject(s) - materials science , optoelectronics , thermal expansion , silicon , substrate (aquarium) , power semiconductor device , power (physics) , composite material , oceanography , geology , physics , quantum mechanics
GaN grown on Si is currently the only pathway towards high volume manufacturing of GaN based RF devices. In this paper we present the technological status of GaN grown on 100 mm Si substrates. Optimised growth, accounting for the lattice and thermal coefficient of expansion mismatch results in device quality GaN layers that exhibit excellent uniformity over the 100 mm Si substrate. The electrical characteristics of the fabricated devices reflect the high quality of the layers, leading to saturated power levels of 3.3 W/mm, the highest power densities reported to date for GaN on Si. Large periphery devices are shown to achieve up to 27 W of output power.