Open AccessPhotoluminescence and Photoreflectance Characterization of Cubic GaN/Al x Ga 1– x N Quantum Wells
Author(s) -
Noriega O.C.,
Leite J.R.,
Meneses E.A.,
Soares J.A.N.T.,
Rodrigues S.C.P.,
Scolfaro L.M.R.,
Sipahi G.M.,
Köhler U.,
As D.J.,
Potthast S.,
Khartchenko A.,
Lischka K.
Publication year - 2002
Publication title -
physica status solidi (c)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 46
eISSN - 1610-1642
pISSN - 1610-1634
DOI - 10.1002/pssc.200390105
Subject(s) - photoluminescence , quantum well , characterization (materials science) , materials science , spectral line , condensed matter physics , radiative transfer , range (aeronautics) , optoelectronics , molecular physics , physics , optics , nanotechnology , laser , quantum mechanics , composite material
The optical properties of cubic AlGaN/GaN multiple quantum well (MQW) structures are investigated in the temperature range 1.7–300 K by photoluminescence (PL) and modulated photoreflectance (PR) techniques. The PL and PR spectra of the MQWs display features, which can be clearly ascribed to strong radiative recombinations taking place at the GaN QW regions. The measured carrier confinement energies in the QWs are in good agreement with the results of calculations carried out using a k · p eight‐band Kane model assuming ideal sharp barrier/well interfaces.