Optical Properties of InAlGaN Heterostructures Grown by RF‐MBE | Zendy

Androulidaki M. | Zendy; Pelekanos N.T. | Zendy; Dimakis E. | Zendy; Kalaitzakis F. | Zendy; Aperathitis E. | Zendy; BelletAmalric F. | Zendy; Jalabert D. | Zendy; Tsagaraki K. | Zendy; Georgakilas A. | Zendy

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Optical Properties of InAlGaN Heterostructures Grown by RF‐MBE

Author(s) -

Androulidaki M.,

Pelekanos N.T.,

Dimakis E.,

Kalaitzakis F.,

Aperathitis E.,

BelletAmalric F.,

Jalabert D.,

Tsagaraki K.,

Georgakilas A.

Publication year - 2002

Publication title -

physica status solidi (c)

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.21

H-Index - 46

eISSN - 1610-1642

pISSN - 1610-1634

DOI - 10.1002/pssc.200390099

Subject(s) - heterojunction , optoelectronics , materials science , quantum well , molecular beam epitaxy , optics , epitaxy , nanotechnology , laser , physics , layer (electronics)

We performed optical characterisation on high‐quality InAlGaN thin films and InAlGaN/GaN quantum wells (QWs) grown by rf‐MBE. Our main findings are that the In bowing coefficient in In 0.08 Al 0.29 Ga 0.63 N alloys is found unexpectedly large ( b I = 8.4 eV), and that the internal field in In 0.08 Al 0.29 Ga 0.63 N/GaN QWs is strongly reduced (0.25 MV/cm) as a consequence of enhanced polarisation matching between well and barrier layers.

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