Open AccessOptical Properties of InAlGaN Heterostructures Grown by RF‐MBE
Author(s) -
Androulidaki M.,
Pelekanos N.T.,
Dimakis E.,
Kalaitzakis F.,
Aperathitis E.,
BelletAmalric F.,
Jalabert D.,
Tsagaraki K.,
Georgakilas A.
Publication year - 2002
Publication title -
physica status solidi (c)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 46
eISSN - 1610-1642
pISSN - 1610-1634
DOI - 10.1002/pssc.200390099
Subject(s) - heterojunction , optoelectronics , materials science , quantum well , molecular beam epitaxy , optics , epitaxy , nanotechnology , laser , physics , layer (electronics)
We performed optical characterisation on high‐quality InAlGaN thin films and InAlGaN/GaN quantum wells (QWs) grown by rf‐MBE. Our main findings are that the In bowing coefficient in In 0.08 Al 0.29 Ga 0.63 N alloys is found unexpectedly large ( b I = 8.4 eV), and that the internal field in In 0.08 Al 0.29 Ga 0.63 N/GaN QWs is strongly reduced (0.25 MV/cm) as a consequence of enhanced polarisation matching between well and barrier layers.