Open AccessLuminescence of Localised Excitons in InGaN/GaN Multiple Quantum Wells
Author(s) -
Miasojedovas S.,
Juršėnas S.,
Kurilčik G.,
Žukauskas A.,
Feng ShihWei,
Yang C.C.,
Chuang HuiWen,
Kuo ChengTa,
Tsang JianShihn
Publication year - 2002
Publication title -
physica status solidi (c)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 46
eISSN - 1610-1642
pISSN - 1610-1634
DOI - 10.1002/pssc.200390093
Subject(s) - exciton , photoluminescence , quantum well , relaxation (psychology) , luminescence , materials science , spectroscopy , excitation , condensed matter physics , line (geometry) , molecular physics , photoluminescence excitation , optoelectronics , optics , chemistry , physics , quantum mechanics , laser , psychology , social psychology , geometry , mathematics
Temperature‐dependent, excitation power‐dependent, and time‐resolved photoluminescence spectroscopy has been performed on InGaN/GaN multiple quantum wells of different thickness. The obtained spectral features are in line with the localised exciton model. The appearance of fast initial relaxation and the increase in the late‐relaxation time have been observed with increasing well thickness. The results are explained by formation of large spatially separated In‐rich and In‐poor regions in the quantum well layers.