Open AccessStudy of Laser Threshold Temperature Sensitivity in Optically Pumped GaN Epilayers
Author(s) -
Ryabtsev A.G.,
Lutsenko E.V.,
Ryabtsev G.I.,
Yablonskii G.P.,
Smal A.S.,
Schineller B.,
Heuken M.
Publication year - 2002
Publication title -
physica status solidi (c)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 46
eISSN - 1610-1642
pISSN - 1610-1634
DOI - 10.1002/pssc.200390092
Subject(s) - wurtzite crystal structure , recombination , spontaneous emission , materials science , laser , luminescence , amplified spontaneous emission , atomic physics , optoelectronics , chemistry , optics , physics , zinc , biochemistry , metallurgy , gene
On the base of experimental spontaneous emission spectra measured at laser threshold the temperature dependencies of the radiative R sp and nonradiative Q recombination rates as well as the spontaneous emission internal quantum efficiency η sp for optically pumped wurtzite GaN/Al 2 O 3 epilayers have been calculated. The recombination rate induced by the amplified luminescence R lum was taken into account. It is shown that the main reason of the increasing threshold pump rate R p with temperature T for the GaN‐based compounds is a substantial rise of the nonradiative recombination rate. The portion of Q in R p exceeds 80–90%. The contributions of R sp and R lum in R p amount to several percents. The η sp value is of 0.12–0.18 within the temperature interval of 300–450 K. Further increase in T leads to an abrupt decrease in η sp down to 0.06 at 517 K.