Open AccessProperties of AlN Layers Grown on SiC Substrates in Wide Temperature Range by HVPE
Author(s) -
Ledyaev O.Yu.,
Cherenkov A.E.,
Nikolaev A.E.,
Nikitina I.P.,
Kuznetsov N.I.,
Dunaevski M.S.,
Titkov A.N.,
Dmitriev V.A.
Publication year - 2002
Publication title -
physica status solidi (c)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 46
eISSN - 1610-1642
pISSN - 1610-1634
DOI - 10.1002/pssc.200390091
Subject(s) - materials science , electrical resistivity and conductivity , full width at half maximum , epitaxy , atmospheric temperature range , layer (electronics) , analytical chemistry (journal) , diffraction , surface roughness , optoelectronics , optics , composite material , chemistry , physics , chromatography , meteorology , electrical engineering , engineering
AlN epitaxial layers were grown on 6H‐SiC on‐axis substrates by HVPE. The deposition was performed directly on (0001)Si face of the substrates without any buffer layer. Growth temperature was varied from 700 to 1200 °C. Thickness of AlN layers ranged from 0.1 to 1 μm. AlN surface morphology was studied by atomic force microscopy (AFM). The minimum value of R a roughness was obtained for 0.1 μm thick layer and was less than 1 nm. Structural properties were investigated using X‐ray diffraction (XRD). XRD rocking curves (RC) were obtained in ω ‐scan mode at (0002) reflection. The minimum value of RC FWHM measured in ω ‐scan (0002) mode was about 60 arcsec. This value indicates that the layers have high crystalline quality. Specific resistivity of AlN was measured in the temperature range from 300 to 700 K. The values of the specific resistivity for AlN were found to be exceed 4 × 10 13 and 1 × 10 9 Ω cm at 300 and 700 K, respectively.