Open AccessField Emission from Polycrystalline GaN Grown on Mo Substrate
Author(s) -
Yamanaka T.,
Tampo H.,
Yamada K.,
Ohnishi K.,
Hashimoto M.,
Asahi H.
Publication year - 2002
Publication title -
physica status solidi (c)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 46
eISSN - 1610-1642
pISSN - 1610-1634
DOI - 10.1002/pssc.200390090
Subject(s) - field electron emission , crystallite , ohmic contact , materials science , substrate (aquarium) , molecular beam epitaxy , electric field , electron cyclotron resonance , current density , optoelectronics , analytical chemistry (journal) , electron , epitaxy , chemistry , nanotechnology , metallurgy , layer (electronics) , physics , oceanography , quantum mechanics , chromatography , geology
Polycrystalline GaN layers are grown on polycrystalline Mo substrate by gas source molecular beam epitaxy using an ion removal electron cyclotron resonance radical cell. Electronic transport across the GaN/Mo interface shows ohmic characteristics. Atomic force microscopy observation shows grain structures of GaN with a grain size of 300–600 nm. Field emission measurement is carried out on the polycrystalline GaN/Mo samples. A turn‐on electric field of the electron emission is estimated to be as low as 6.4 V/μm at an emission current density of 10 —8 A/cm 2 . The field enhancement factor estimated from a Fowler–Nordheim plot is about 200.