Open AccessElectrical Properties of Acceptor Levels in Mg‐Doped GaN
Author(s) -
Nakano Y.,
Jimbo T.
Publication year - 2002
Publication title -
physica status solidi (c)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 46
eISSN - 1610-1642
pISSN - 1610-1634
DOI - 10.1002/pssc.200390082
Subject(s) - acceptor , materials science , doping , schottky diode , deep level transient spectroscopy , activation energy , analytical chemistry (journal) , annealing (glass) , optoelectronics , chemical vapor deposition , diode , chemistry , silicon , condensed matter physics , physics , chromatography , composite material
Abstract Thermal admittance and current deep‐level transient spectroscopy techniques have been applied to Schottky diodes fabricated on Mg‐doped GaN grown by metalorganic chemical vapour deposition to investigate the dependence of the Mg acceptor levels on the annealing temperature. Both measurements revealed two deep acceptor levels with activation energies of ∼135 and ∼160 meV above the valence band. The former level is only seen when the samples were annealed at temperatures between 650 °C and 700 °C, and its presence corresponds with a significant increase in effective acceptor concentration, as confirmed by capacitance–voltage measurements. Therefore, this acceptor level is considered to dominate the electrical activation of Mg in GaN.