Open AccessIndium Doping to GaN Grown on GaAs{114}B Substrates by Metalorganic Vapor Phase Epitaxy
Author(s) -
Funato M.,
Shimogami K.,
Ujita S.,
Kawaguchi Y.,
Fujita Sz.,
Fujita Sg.
Publication year - 2002
Publication title -
physica status solidi (c)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 46
eISSN - 1610-1642
pISSN - 1610-1634
DOI - 10.1002/pssc.200390081
Subject(s) - indium , epitaxy , materials science , doping , optoelectronics , vapor phase , strain (injury) , metalorganic vapour phase epitaxy , nanotechnology , layer (electronics) , medicine , physics , thermodynamics
The effects of indium doping on the structural properties of hexagonal GaN grown on GaAs{114}B substrates with AlAs intermediate layers are investigated. It is revealed that the In doping allows us to control the residual strain in GaN, and that the highest quality can be achieved by optimizing the In flow rate so as to minimize the strain.