Open AccessGrowth and Characterization of Er‐Doped GaN
Author(s) -
Bang Hyungjin,
Piao Guanxi,
Sawahata Junji,
Li Zhiqian,
Akimoto Katsuhiro,
Nomura Masaharu
Publication year - 2002
Publication title -
physica status solidi (c)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 46
eISSN - 1610-1642
pISSN - 1610-1634
DOI - 10.1002/pssc.200390080
Subject(s) - luminescence , doping , molecular beam epitaxy , materials science , epitaxy , symmetry (geometry) , optoelectronics , photoluminescence , condensed matter physics , crystallography , nanotechnology , chemistry , physics , geometry , mathematics , layer (electronics)
Single crystalline Er‐doped GaN was grown by ammonia source molecular beam epitaxy, and luminescence properties, structural properties were studied. It was found that the intensity of the luminescence in green spectral region from Er‐doped GaN is two orders of magnitude stronger than that of Tb‐doped GaN, which shows luminescence in green spectral region as well, and that the coordination symmetry of N around Er in GaN was lower than that of Tb. The lower coordination symmetry may be one of the reasons for the improved luminescence of Er‐doped GaN.