Open AccessDefect Recovery in AlN and InN after Heavy Ion Implantation
Author(s) -
Lorenz K.,
Vianden R.
Publication year - 2002
Publication title -
physica status solidi (c)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 46
eISSN - 1610-1642
pISSN - 1610-1634
DOI - 10.1002/pssc.200390076
Subject(s) - annealing (glass) , ion implantation , materials science , lattice (music) , ion , vacancy defect , crystallography , condensed matter physics , molecular physics , analytical chemistry (journal) , metallurgy , chemistry , physics , organic chemistry , chromatography , acoustics
The annealing of implantation induced lattice damage in AlN and InN was studied by means of the perturbed angular correlation (PAC) technique using the PAC probes 181 Hf( 181 Ta) and 111 In( 111 Cd). In AlN substantial fractions of the probe atoms occupied substitutional, undisturbed lattice sites after annealing. A detailed investigation of the changes observed during an isochronous annealing programme indicates differences in the recovery process. After In implantation AlN shows considerable annealing of lattice damage already at unexpectedly low temperatures below 600 °C. For Hf implantation AlN experiences a “reverse annealing” effect. For the measurements in InN the PAC results show evidence of In clusters, which are easily formed during the growth of InN or InGaN.