Open AccessThermal Stability of Sheet Resistance in AlGaN/GaN 2DEG Structure
Author(s) -
Shiojima K.,
Shigekawa N.
Publication year - 2002
Publication title -
physica status solidi (c)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 46
eISSN - 1610-1642
pISSN - 1610-1634
DOI - 10.1002/pssc.200390071
Subject(s) - annealing (glass) , materials science , sheet resistance , optoelectronics , thermal stability , reflectivity , composite material , optics , layer (electronics) , chemistry , physics , organic chemistry
Abstract An annealing study of an AlGaN/GaN two‐dimensional electron gas structure was conducted in combination with precise AlGaN thickness measurements using reflectivity spectra. It is found that the sheet resistance increases when annealing is performed below the growth temperature, and the increase depends on the AlGaN thickness and crystal quality. One possible explanation for the increase is that Si donors in low‐quality AlGaN layers are passivated or compensated from the top surfaces upon annealing.