Open AccessThe Influence of Nitrogen Clustering Effect on Optical Transitions in GaInNAs/GaAs Quantum Wells
Author(s) -
Jiang Desheng,
Liang Xiaogan,
Sun Baoquan,
Bian Lifeng,
Li Lianhe,
Pan Zhong,
Wu Ronghan
Publication year - 2002
Publication title -
physica status solidi (c)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 46
eISSN - 1610-1642
pISSN - 1610-1634
DOI - 10.1002/pssc.200390068
Subject(s) - photoluminescence , indium , quantum well , nitrogen , annealing (glass) , luminescence , materials science , cluster (spacecraft) , spectral line , excitation , blueshift , bound state , optoelectronics , analytical chemistry (journal) , condensed matter physics , molecular physics , chemistry , physics , optics , laser , organic chemistry , chromatography , quantum mechanics , astronomy , computer science , composite material , programming language
Photoluminescence (PL) spectra of GaInNAs/GaAs multiple quantum wells and GaInNAs epilayers grown on GaAs substrate show an apparent “S‐shape” temperature‐dependence of the of dominant luminescence peak. At low temperature and weak excitation conditions, a PL peak related to nitrogen cluster‐induced bound states can be well resolved in the PL spectra. It displays a remarkable red shift of up to 60 meV and is thermally quenched below 100 K with increasing temperature, being attributed to N‐cluster induced bound states. The indium incorporation exhibits significant effect on the cluster formation. The rapid thermal annealing treatment at 750 °C can essentially remove the bound states‐induced peak.