Open AccessStep‐Flow Growth of InN on N‐Polarity GaN Template by Molecular Beam Epitaxy with a Growth Rate of 1.3 μm/h
Author(s) -
Xu K.,
Terashima W.,
Hata T.,
Hashimoto N.,
Ishitani Y.,
Yoshikawa A.
Publication year - 2002
Publication title -
physica status solidi (c)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 46
eISSN - 1610-1642
pISSN - 1610-1634
DOI - 10.1002/pssc.200390067
Subject(s) - molecular beam epitaxy , materials science , epitaxy , sapphire , analytical chemistry (journal) , substrate (aquarium) , reflection high energy electron diffraction , growth rate , electron mobility , electron diffraction , optoelectronics , layer (electronics) , chemistry , diffraction , optics , nanotechnology , laser , physics , oceanography , geometry , mathematics , chromatography , geology
The effects of substrate temperature and surface stoichiometry on the growth behavior of InN were investigated in molecular beam epitaxy with in situ monitoring by reflection high‐energy electron diffraction and spectroscopic ellipsometry. InN was grown on nitrided sapphire substrate or N‐polarity GaN template. For both cases, InN layers were found in N polarity by coaxial impact collision ion scattering spectroscopy. At growth temperatures ranging from 470 to 590 °C, the N‐rich condition was favorable for stable InN growth. Under the In‐limited growth condition, the step‐flow growth of InN was achieved on N‐polarity GaN template at 580 °C with a growth rate of 1.3 μm/h. The FWHMs of X‐ray rocking curves around InN (002) and (102) reflections were about 200–250 arcsec and 950–1100 arcsec, respectively. The InN layer grown with N polarity on GaN showed a Hall mobility as high as 800 cm 2 /V · s with a background electron concentration of 2.1 × 10 19 cm —3 at room temperature.