Open AccessUltraviolet Raman and Optical Transmission Studies of RF Sputtered Indium Nitride
Author(s) -
Butcher K.S.A.,
Dou H.,
Goldys E.M.,
Tansley T.L.,
Srikeaw S.
Publication year - 2002
Publication title -
physica status solidi (c)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 46
eISSN - 1610-1642
pISSN - 1610-1634
DOI - 10.1002/pssc.200390066
Subject(s) - raman spectroscopy , materials science , ultraviolet , nitride , oxide , etching (microfabrication) , indium , band gap , optoelectronics , absorption (acoustics) , sputtering , indium nitride , analytical chemistry (journal) , layer (electronics) , optics , thin film , chemistry , nanotechnology , metallurgy , composite material , physics , chromatography
UV Raman and absorption measurements plots are used to demonstrate the improvement for InN samples following removal of a surface oxide by 1.0 M HCl etching. An increase in Raman spectra signal strength and a reduction of the apparent band‐gap by up to 50 meV is observed. The thick surface oxide is believed to have formed as a result of ex‐situ exposure of the samples on removal from the growth system. The importance of target nitridation for RF sputtered material is also demonstrated.