Effect of Low‐Temperature‐Grown GaN Intermediate Layer on InN Growth by Plasma‐Assisted MBE | Zendy

Higashiwaki M. | Zendy; Matsui T. | Zendy

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Effect of Low‐Temperature‐Grown GaN Intermediate Layer on InN Growth by Plasma‐Assisted MBE

Author(s) -

Higashiwaki M.,

Matsui T.

Publication year - 2002

Publication title -

physica status solidi (c)

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.21

H-Index - 46

eISSN - 1610-1642

pISSN - 1610-1634

DOI - 10.1002/pssc.200390063

Subject(s) - molecular beam epitaxy , materials science , sapphire , layer (electronics) , substrate (aquarium) , hall effect , optoelectronics , surface roughness , plasma , electron mobility , surface finish , epitaxy , electrical resistivity and conductivity , optics , composite material , electrical engineering , laser , oceanography , physics , engineering , quantum mechanics , geology

We found that inserting a low‐temperature‐grown layer of GaN between a low‐temperature‐grown InN buffer layer and a sapphire substrate was an effective way of improving structural and electrical properties of InN films grown by plasma‐assisted molecular beam epitaxy. The surface of a 260 nm thick InN film grown under the optimum condition was smooth, with a surface root‐mean‐square roughness of less than 4 nm. The Hall mobility of the InN film at room temperature was greater than 1500 cm 2 /Vs with an electron density of less than 2.0 × 10 18 cm –3 .

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